| PART |
Description |
Maker |
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| 2SK833 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET
Fast switching N-channel silicon MOS field effect power transistor.
|
NEC
|
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| AP2532GY |
Low Gate Charge, Fast Switching Performance
2.4 A, 30 V, 0.13 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
|
| GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| STGW30NC60WD |
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH?/a> IGBT
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| SIDC03D120F6 |
Fast switching diode chip in EMCON-Technology soft, fast switching
|
Infineon Technologies AG
|
| SI7390DP-T1 SI7390DP-T1-E3 SI7390DP |
N-Channel 30-V (D-S) Fast Switching WFET
|
VISAY[Vishay Siliconix]
|
| SI7476DP-T1-E3 SI7476DP |
N-Channel 40-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SI9422DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| MC4438 |
N-Channel 60-V (D-S) MOSFET Fast switching speed
|
ShenZhen FreesCale Electronics. Co., Ltd
|
